The energy band diagrams for three semiconduc | vedclass

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(D) In sample $X$,there is no impurity energy level within the forbidden energy gap,so it is an intrinsic (undoped) semiconductor.In sample $Y$,the im

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Sample $X$ is undoped while samples $Y$ and $Z$ have been doped with a fifth group and a third group impurity respectively.

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(D) In sample $X$,there is no impurity energy level within the forbidden energy gap,so it is an intrinsic (undoped) semiconductor.In sample $Y$,the impurity energy level lies just below the conduction band. This is characteristic of an $n$-type semiconductor,which is formed by doping with a fifth group (pentavalent) impurity.In sample $Z$,the impurity energy level lies just above the valence band. This is characteristic of a $p$-type semiconductor,which is formed by doping with a third group (trivalent) impurity.Therefore,sample $X$ is undoped,sample $Y$ is doped with a fifth group impurity,and sample $Z$ is doped with a third group impurity.

The energy band diagrams for three semiconductor samples of silicon are as shown. We can then assert that :-

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